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| Preliminary Data SIPMOS(R) Small-Signal-Transistor Features * Dual N Channel * Enhancement mode BSO 615N Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 60 0.15 2.6 V A * Avalanche rated * Logic Level * dv/dt rated Type BSO 615N Parameter Continuous drain current, one channel active Pulsed drain current, one channel active Package SO 8 Symbol Ordering Code Q67041-S2843 Value 2.6 10.4 60 2.6 0.18 6 mJ A mJ kV/s Unit A Maximum Ratings, at T j = 25 C, unless otherwise specified ID IDpulse EAS IAR EAR dv/dt T A = 25 C Avalanche energy, single pulse I D = 2.6 A, V DD = 25 V, R GS = 25 Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = 2.6 A, V DS = 40 V, di/dt = 200 A/s, T jmax = 150 C Gate source voltage Power dissipation, one channel active VGS Ptot Tj Tstg 20 2 -55 ... +150 -55 ... +150 55/150/56 V W C T A = 25 C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Data Sheet 1 05.99 BSO 615N Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec., 6 cm2 cooling area 1) Symbol min. Values typ. max. 35 100 62.5 K/W Unit RthJS Rth(JA) Rth(JA) - Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values min. Static Characteristics Drain- source breakdown voltage Unit max. 2 A V typ. 1.6 V(BR)DSS VGS(th) IDSS 60 1.2 VGS = 0 V, I D = 0.25 mA Gate threshold voltage, VGS = VDS I D = 20 A Zero gate voltage drain current VDS = 60 V, V GS = 0 V, T j = 25 C VDS = 60 V, V GS = 0 V, T j = 150 C Gate-source leakage current - 0.1 10 10 1 100 100 nA IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, I D = 2.6 A - 0.12 0.15 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BSO 615N Electrical Characteristics Parameter Characteristics Transconductance Symbol min. Values typ. 5.5 300 90 50 12 max. 380 120 65 20 ns S pF Unit gfs Ciss Coss Crss td(on) 2.4 - VDS2*I D*RDS(on)max , ID = 2.6 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, V GS = 4.5 V, ID = 2.6 A, RG = 16 Rise time tr - 15 25 VDD = 30 V, V GS = 4.5 V, ID = 2.6 A, RG = 16 Turn-off delay time td(off) - 20 30 VDD = 30 V, V GS = 4.5 V, ID = 2.6 A, RG = 16 Fall time tf - 15 25 VDD = 30 V, V GS = 4.5 V, ID = 2.6 A, RG = 16 Data Sheet 3 05.99 BSO 615N Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold min. typ. 0.4 7 14 3.6 max. 0.6 10 20 - Unit QG(th) Qg(5) Qg V(plateau) - nC VDD = 40 V, ID = 0.1 A, VGS = 1 V Gate charge at Vgs=5V VDD = 40 V, ID = 2.6 A, VGS = 0 to 5 V Gate charge total nC V VDD = 40 V, ID = 2.6 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 2.6 A Reverse Diode Inverse diode continuous forward current IS I SM VSD t rr Q rr - 0.95 50 0.1 2.6 10.4 1.2 75 0.15 A TA = 25 C Inverse diode direct current,pulsed TA = 25 C Inverse diode forward voltage V ns C VGS = 0 V, I F = 5.2 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/s Data Sheet 4 05.99 BSO 615N Power Dissipation Drain current Ptot = f (TA), VGS = 4,5 V BSO 615N ID = f (TA ), VGS = 4,5 V BSO 615N 2.4 W 2.8 A 2.4 2.0 2.2 1.8 2.0 1.8 Ptot 1.6 ID 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 160 0.0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area Transient thermal impedance ID = f ( V DS ) parameter : D = 0 , TA = 25 C, VGS = 4,5 V 10 A 2 BSO 615N ZthJA = f(tp ) parameter : D = tp /T 10 2 BSO 615N K/W /ID 10 1 = VD S tp = 5.7s 10 s R ID 100 s 10 0 1 ms Z thJA ( DS ) on 10 1 D = 0.50 10 ms 0.20 10 0 0.10 single pulse 0.05 0.02 0.01 10 -1 DC 10 -2 -1 10 10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 0 10 1 V 10 2 s 10 4 VDS tp Data Sheet 5 05.99 BSO 615N Typ. output characteristics Drain-source on-resistance I D = f (VDS) parameter: tp = 80 s BSO 615N RDS(on) = f (Tj) parameter : I D = 2.6 A, VGS = 4.5 V BSO 615N 6.5 A Ptot = 2W g j ihf e l kd 0.36 VGS [V] a 2.0 b 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 5.5 5.0 4.5 0.28 c c d RDS(on) 0.24 0.20 ID 4.0 3.5 3.0 2.5 2.0 1.5 1.0 e f g h i j k 98% 0.16 0.12 0.08 0.04 typ bl 0.5 a 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 -60 -20 20 60 100 C 180 VDS Tj Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz 10 3 pF Ciss C 10 2 Coss Crss 10 1 0 5 10 15 20 25 30 V 40 VDS Data Sheet 6 05.99 BSO 615N Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s VDS 2 x I D x RDS(on) max 15 A Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS , ID = 20 A 3.2 V 12 10 VGS(th) 11 2.4 ID 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 V 2.0 1.6 max 1.2 0.8 typ 0.4 min 10 0.0 -60 -20 20 60 100 V 160 VGS Tj Forward characteristics of reverse diode I F = f (VSD) parameter: Tj , tp = 80 s 10 2 BSO 615N A 10 1 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Data Sheet 7 05.99 BSO 615N Avalanche Energy EAS = f (Tj) parameter: ID = 2.6 A, VDD = 25 V RGS = 25 65 Typ. gate charge VGS = f (Q Gate) parameter: ID puls = 2.6 A BSO 615N 16 mJ V 55 50 45 12 VGS EAS 40 35 10 8 30 25 20 15 10 5 0 20 40 60 80 100 120 C 0,2 VDS max 6 0,8 VDS max 4 2 160 0 0 4 8 12 16 nC 24 Drain-source breakdown voltage Tj Q Gate V(BR)DSS = f (Tj) BSO 615N 72 V 68 66 64 62 60 58 56 54 -60 V(BR)DSS -20 20 60 100 C 180 Tj Data Sheet 8 05.99 |
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